GT50N322A 2008-01-11 1 toshiba insulated gate bipolar tr ansistor silicon n channel igbt GT50N322A voltage resonance inverter switching application fifth generation igbt ? frd included between emitter and collector ? enhancement mode type ? high speed igbt : t f = 0.10 s (typ.) (i c = 60 a) frd : t rr = 0.8 s (typ.) (di/dt = ? 20 a/ s) ? low saturation voltage: v ce (sat) = 2.2 v (typ.) (i c = 60 a) absolute maximum ratings (ta = 25c) characteristics symbol rating unit collector-emitter voltage v ces 1000 v gate-emitter voltage v ges 25 v dc i c 50 collector current 1ms i cp 120 a dc i f 15 diode forward current 1ms i fp 120 a collector power dissipation (tc = 25c) p c 156 w junction temperature t j 150 c storage temperature t stg ? 55 to 150 c note: using continuously under heavy loads (e.g. the a pplication of high temperature/current/voltage and the significant change in temperature, et c.) may cause this product to decreas e in the reliability significantly even if the operating conditions (i.e. operat ing temperature/current/voltage, etc. ) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept a nd methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). equivalent circuit marking unit: mm jedec ? jeita ? toshiba 2-16c1c weight: 4.6 g (typ.) emitter collector gate lot no. a line indicates lead (pb)-free package or lead (pb)-free finish. 50n322a toshiba part no. (or abbreviation code)
GT50N322A 2008-01-11 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i ges v ge = 25 v, v ce = 0 ? ? 500 na collector cut-off current i ces v ce = 1000 v, v ge = 0 ? ? 1.0 ma gate-emitter cut-off voltage v ge (off) i c = 60 ma, v ce = 5 v 3.0 ? 6.0 v collector-emitter saturation voltage v ce (sat) i c = 60 a, v ge = 15 v ? 2.2 2.8 v input capacitance c ies v ce = 10 v, v ge = 0, f = 1 mhz ? 4000 ? pf rise time t r ? 0.23 ? turn-on time t on ? 0.33 ? fall time t f ? 0.10 0.25 switching time turn-off time t off resistive load v cc = 600 v, i c = 60 a v gg = 15 v, r g = 51 (note 1) ? 0.70 ? s diode forward voltage v f i f = 15 a, v ge = 0 ? 1.2 1.9 v reverse recovery time t rr i f = 15 a, v ge = 0, di/dt = ? 20 a/ s ? 0.8 ? s thermal resistance rth(j-c) ? ? ? 0.8 c/w thermal resistance rth(j-c) ? ? ? 4.0 c/w note 1: switching time measurement circuit and input/output waveforms 10% 90% v ge v ce i c t off t r t on 0 0 t f 10% 10% 90% 90% r g v cc 10 0
GT50N322A 2008-01-11 3 200 0 0 50 100 200 50 100 0 10 15 20 v ce = 150 v 50 100 150 150 5 5 0 ? 50 0 50 4 100 150 1 2 3 i c = 20 a 80 100 40 60 10 0 2 4 6 8 tc = 125c ? 40 25 100 0 20 40 60 80 120 0 1 2 3 4 5 8 20 15 v ge = 7 v 10 100 0 20 40 60 80 120 100 0 0 1 2 3 4 5 20 40 60 80 8 20 15 v ge = 7 v 10 120 0 1 2 3 4 5 8 20 15 v ge = 7 v 10 100 0 20 40 60 80 120 collector-emitter saturation voltage v ce (sat) (v) collector current i c (a) collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) gate-emitter voltage v ge (v) i c ? v ge case temperature tc (c) v ce (sat) ? tc common emitter tc = ? 40c common emitter tc = 25c common emitter tc = 125c common emitter v ce = 5 v common emitter v ge = 15 v collector-emitter voltage v ce (v) gate-emitter voltage v ge (v) gate charge q g (nc) v ce, v ge ? q g common emitter r l = 2.5 tc = 25c
GT50N322A 2008-01-11 4 tc = 125c 25 ? 40 0 0.5 1.0 1.5 2.0 2.5 0 20 40 60 80 100 300 1 100 1000 30000 10 50 3 300 100 30 5 1000 1 10 1000 10000 10 100 1 100 10 s* 10 ms * 1 ms * 100 s* 10 0.01 0 20 60 80 0.1 1 40 t f t r t on t off 10 0.01 1 10 100 1000 0.1 1 t off t on t r t f switching time ( s) collector current i c (a) switching time ( s) gate resistance r g ( ? ) switching time ? r g collector-emitter voltage v ce (v) safe operating area collector current i c (a) switching time ? i c collector current i c (a) collector-emitter voltage v ce (v) reverse bias soa common emitter v cc = 600 v i c = 60 a v gg = 15 v tc = 25c common emitter v cc = 600 v r g = 51 v gg = 15 v tc = 25c t j 125c v ge = 15 v r g = 10 * : single non-repetitive pulse tc = 25c curves must be derated linearly with increases in temperature. dc operation (continuous) i c max (pulsed) * 10 1 10 100 1000 100 1000 10000 c res c oes c ies collector-emitter voltage v ce (v) c ? v ce capacitance c (pf) common emitter v ge = 0 f = 1 mhz tc = 25c forward voltage v f (v) i f ? v f forward current i f (a) common emitter v ge = 0 i c max 10 30 300 3 30 3 30 3000 300
GT50N322A 2008-01-11 5 tc = 25c 10 ? 3 10 ? 5 10 ? 2 10 ? 1 10 0 10 1 10 2 10 ? 4 10 ? 3 10 ? 2 10 ? 1 10 0 10 1 10 2 0 50 40 30 20 10 0 ? 50 ? 150 ? 200 ? 250 i r r t r r ? 100 1 0.8 0.6 0.4 0.2 0 5 6 7 8 9 10 0 20 40 60 80 100 i r r t r r 0 0.4 0.8 1.2 1.6 2 peak reverse recovery current i rr (a) reverse recovery time t rr ( s) i rr , t rr ? i f forward current i f (a) reverse recovery time t rr ( s) i rr , t rr ? di/dt di/dt (a/ s) peak reverse recovery current i rr (a) pulse width t w (s) r th (j ? c ) ? t w transient thermal impedance(junction ? case) r th(j? c) (c/w) common emitter di/dt = ? 20 a/ s tc = 25c common emitter i f = 60 a tc = 25c diode stage igbt stage
GT50N322A 2008-01-11 6 restrictions on product use 20070701-en ? the information contained herein is subject to change without notice. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity a nd vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshib a products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconduct or devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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